Abstract
Using plasma-assisted molecular beam epitaxy, highly resistive single crystalline epitaxial indium-doped thin films of (101) tin oxide, SnO2, were grown on r-plane sapphire substrates. The maximum resistivity for a 450 nm uniformly doped layer with an In concentration of 9.8×1019 cm-3 was 2.4×104 Ω cm with a corresponding sheet resistance of 553 MΩ/□. The sheet resistance for a 750 nm non-uniformly doped film was 2 GΩ/□. Indium was a deep acceptor which compensated the unintentionally doped electrons and created highly resistive films. Insulating SnO2 films will enable lower levels of controllable doping and the fundamental properties of SnO2 to be studied.
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