Synthesis and Characterization of Heterostructured Mn3GaN0.5/GaN Nanowires

Abstract

Heterostructured Mn 3 GaN 0 . 5 /GaN nanowires have been synthesized by a catalytic chemical vapor deposition method. Mn 3 GaN 0 . 5 /GaN nanowires exhibit ferromagnetic properties with a Curie temperature above room temperature. It was observed that the acceptor Mn 2 + /Mn 3 + (Mn 3d) levels superpose on the GaN energy levels, shifting the energy of 5.8 eV toward Fermi energy. Compared with GaN nanowires, the D°X line of Mn 3 GaN 0 . 5 /GaN at 397.8 nm (3.117 eV) indicated the 33.4 nm red-shift due to hole-doping in the PL spectra. The synthesized Mn 3 GaN 0 . 5 /GaN nanowires had the relatively high yellow band emission of about 596.5 nm, due to the internal 4 T 1 → 6 A 1 transition of Mn 2 + (3d 5 ), which is permitted by selection rules. The sharp peak at 675.6 nm in Mn 3 GaN 0 . 5 /GaN nanowire PL spectra might correspond to the transition 4 T 2 → defect state.