Abstract
Single-crystalline wurtzite GaN nanowires have been synthesized through ammoniating Ga 2O 3/Ta films by RF magnetron sputtering. The products have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), selected area electron diffraction (SAED), X-ray photoelectron microscopy (XPS) and photoluminescence (PL). The results show that the nanowires have a hexagonal wurtzite structure with diameters ranging from 10 nm to 30 nm and lengths typically up to several tens of micrometers. The representative photoluminescence spectrum at room temperature exhibits a strong UV light emission band centered at 364 nm. The growth mechanism of the crystalline GaN nanowires is discussed briefly.
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