Abstract
In this paper, the productions of gallium oxide (Ga2O3) nanoparticles were achieved via using the Nd: YAG laser deposition method with a fundamental wavelength (1064 nm). These nanoparticles were characterized by using different methods such as X-ray diffractometer (XRD), atomic force microscopy (AFM) and Ultraviolet–visible (UV–vis) spectroscopy. To examine the effects of laser energy on the properties of nanoparticles, the experimental results and theoretical considerations were prepared by the effective method of pulse laser deposition. The synthesis of Ga2O3NPs) was achieved with different ranges of energies (500 to 900 mJ). Average crystallite sizes of the synthesized nanoparticles were found to be in the range of 15-37 nm. On the other hand, the AFM images showed that the size is ranging between 60 and 85 nm. Optical parameters of the samples showed a strong dependence on average crystallite size.
Highlights
Nanoscience is a wide area of science that studies and uses different techniques to obtain stable and new means of nanoparticles
Gallium oxide is considered as a wide band-gap semiconductor which has significant physical properties that are important for photocatalysts, gas sensors, ultraviolet photodetectors, and power devices [3]
The deposited thin films were of single phases along the caxis with the superior rise thin (111) plane
Summary
Nanoscience is a wide area of science that studies and uses different techniques to obtain stable and new means of nanoparticles. Physical forces in the hold of nanoscale particles are included in the manual method of nanoparticles, which lead to the formation of large, stable and well-defined nanostructures. Gallium oxide is considered as a wide band-gap semiconductor which has significant physical properties that are important for photocatalysts, gas sensors, ultraviolet photodetectors, and power devices [3]. These properties can be combined, which allows Ga2O3 thin films to be used in different applications, such as gas sensors, solar cells, deep-UV photo detectors, spintronics and field-effect transistors. Numerous different polymorphs can be created from Ga2O3, which are designated as α-, β-, γ-, δ-, and ε- Ga2O3. β- Ga2O3 has a monoclinic structure and belongs to the space group C2/m [5]
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