Abstract
This work reports the synthesis and characterization of few layers graphene (FLG) film, which was grown by using a home-made APCVD set-up. The FLG films were grown on evaporated polycrystalline nickel films under a mixture of argon and methane with a relatively large-flow and for very short deposition times. The experimental parameters such as the argon/methane ratio and temperature were varied from 800 to 1000 °C, to obtain the optimal FLG deposition parameters. We were able to obtain relatively large area (1 × 1 inch) FLG films comprising 3-5 graphene sheets. Additionally, early attempts to make suitable graphene/SiO2/Si electronic devices are also reported.
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