Abstract
X-ray diffraction profile, Raman and optical absorption spectra, and surface morphology of phase-pure Cu3SbS4 films grown at 425 °C by co-sputtering metal precursors and subsequent sulfurization.
Highlights
Cu3SbS4 phase has a reported direct optical bandgap in the range of 0.4 eV to 1 eV, high optical absorption coefficient (a 4 104 cmÀ1) and p-type electrical conductivity.[17,18,19] Most of the reported work on Cu3SbS4 is on materials only in the form of micro-structures[20,21,22] and nanostructures[23,24,25,26] synthesized by chemical routes
Metal precursors were co-sputtered onto the sapphire substrate, and the samples were sulfurized in a vacuumsealed quartz ampoule
Cu3SbS4 thin films were prepared by co-sputtering of metal precursors and subsequent sulfurization at temperatures from 200–450 1C
Summary
Cu3SbS4 phase has a reported direct optical bandgap in the range of 0.4 eV to 1 eV, high optical absorption coefficient (a 4 104 cmÀ1) and p-type electrical conductivity.[17,18,19] Most of the reported work on Cu3SbS4 is on materials only in the form of micro-structures[20,21,22] and nanostructures[23,24,25,26] synthesized by chemical routes. Paper available for the synthesis of Cu3SbS4, the presence of secondary phases co-existing with these materials and the non-uniform surface morphology still remains a challenge limiting practical use.[31] studies on thin film growth of Cu3SbS4 are necessary to understand both fundamental growth mechanisms and the influence of various deposition parameters on the properties of these films. Among the different available techniques, RF magnetron sputtering is suitable for developing high-quality thin films with an advantage of scaling to large area; the processing of Cu3SbS4 through this route is still unexplored
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