Abstract
Quaternary compound Cu2FeSnS4 (CFTS) thin films, a potential absorber layer candidate in thin film solar cells, were successfully synthesized for the first time by electrochemical deposition method with a post-sulfurization treatment at 500°C and 550°C. The samples were analyzed by X-ray diffraction (XRD), Raman spectroscopy (Raman), X-ray photoelectron spectroscopy (XPS) and ultraviolet–visible-near-infrared spectrophotometer (UV–vis-NIR spectrophotometer). XRD data and Raman spectra revealed that the CFTS thin films possess a stannite structure and the crystallinity of the samples was improved with the increasing sulfurization temperature. X-ray photoemission spectroscopy analysis of the four constituent elements indicated Cu(I), Fe(II), Sn(IV) and sulfide ions. The direct band gap values of samples with post-sulfurization treatment at 500°C and 550°C were evaluated to be 1.35eV and 1.40eV by UV–vis-NIR absorption spectra respectively, which show that CFTS is promising for photovoltaic applications.
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