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Abstract
Abstract—In this study, manufacturing cost reduced for CIS precursor solution from chloride series CuCl2, InCl3, GaCl3 mixed with acetone solvent without binder was discussed. CIS thin films were coated on a substrate using this precursor solution prepared at normal temperature and pressure by Doctor Blade method. We observed that CIS crystals began to form on the surface at 300° C and the surface and internal faults were growing with increasing the temperature. The intensity of main peak increased in CIS absorber layer.
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