Abstract
The paper presents synthesis of Ba0.7Sr0.3TiO3 (BST), Ba0.7Sr0.3TiO3 (BZT) thin films and BZT/BST heterostructures using modified Pechini method. The La0.7Sr0.3MnO3 has been used as a conducting bottom layer to form metal ferroelectric metal capacitor. The thin films are spin coated on SiO2/n-Si (100) substrates. The thin films thus deposited are characterized for crystal structure, morphology, dielectric and complex impedance properties. The results show that BZT/BST heterostructures show reduced loss tangent tan δ and useful value of figure of merit γ in RF range of frequencies. The results on dielectric properties could be analyzed in terms of the Maxwell–Wagner Model and contribution due to superlattice effects.
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More From: Journal of Materials Science: Materials in Electronics
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