Synthesis and Characterization of a Quaternary Semiconductor Based on Cu2ZnSnS4 (CZTS) for Photovoltaic Applications

Abstract

This article presents the synthesis of a kesterite phase quaternary semiconductor, based on the Cu2ZnSnS4 system (abbreviated CZTS), making use of a hydrothermal route starting from metal salt solutions. The results of characterization by X-ray diffraction (XRD) confirm the presence of a tetragonal kesterite phase I-42m with a preferential orientation in the plane (1 1 2). The results of the morphological characterization by means of scanning and transmission electron microscopy (SEM-TEM) confirmed the obtaining of nanometric particles, which are grouped as clusters of approximately 1 micron with crystallite sizes of ≈ 6.0 nm. The complementary analysis of electron microscopy with X-ray energy dispersion spectrometry (EDS) confirmed a good agreement in composition without evidence of volatilization of the species, which allowed the characteristics of the material to be preserved. The results of the analysis by ultraviolet (UV) spectroscopy determined the obtaining of a semiconductor with a band-gap of 1.46 eV, obtained by analyzing its absorption spectrum and the TAUC equation. The electrical properties of the material evaluated by solid state impedance spectroscopy confirmed that the synthesis route is appropriate for obtaining a semiconductor.