Abstract
We examined the electrical properties and microstructure of NiO produced using a sol-gel method and Ni nitrate hexahydrate (<TEX>$Ni[NO_3]_2{\cdot}6H_2O$</TEX>) to investigate if this NiO thin film can be used as an insulator layer for resistance random access memory (ReRAM) devices. It was found that as-prepared NiO film was polycrystalline and presented as the nonstoichiometric compound <TEX>$Ni_{1+x}O$</TEX> with Ni interstitials (oxygen vacancies). Resistances-witching behavior was observed in the range of 0~2 V, and the low-resistance state and high-resistance state were clearly distinguishable (<TEX>${\sim}10^3$</TEX> orders). It was also demonstrated that NiO could be patterned directly by KrF eximer laser irradiation using a shadow mask. NiO thin film fabricated by the sol-gel method does not require any photoresist or vacuum processes, and therefore has potential for application as an insulating layer in low-cost ReRAM devices.
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