Abstract
This letter reports our results on the fabrication of dispersed polyaniline (PANI)/semiconductor quantum dot structures via an electrochemical route for possible application as light emitting devices. High-resolution atomic force microscopy and grazing angle X-ray diffraction techniques have been used to characterize the films. It is shown that the polyaniline films grow as ordered bundles of closely packed polymeric strands in which the ZnSe quantum dots can be uniformly dispersed. The dispersed PANI/Q–ZnSe films have been shown to yield significantly enhanced luminescence.
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