Abstract
High efficiency photocatalyst Bi2O2(CO3)1−xSx was synthesized conveniently with chemical bath precipitation using Bi2O2CO3 as the precursor. The microstructures of the samples are systematically characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS) and UV-Vis spectroscopy; the optical and photocatalytic properties are carefully tested as well. The content of S, which was tuned through the controlling of the precipitation process, was verified to have an intense effect over the photocatalytic properties. A nearly saturated S ratio and the best photocatalytic performance were observed in specimens with the most S content. Our study reveals that, with negligible influence of the morphology and crystal structure, Bi2O2(CO3)1−xSx possessed a broadened optical absorption regionfromultraviolet to visible light, and enhanced photocatalytic activity in comparison to precursor Bi2O2CO3 in photocatalytic degradation of Congo Red aqueous solution.
Highlights
Semiconductor photocatalysis has attracted increasing attention because of the capability of harvesting the solar energy to eliminate environmental pollutants [1,2,3,4,5,6,7]
Bi2 WO6 have been widely used in photocatalysis [8,9,10,11,12,13,14]
P-type (BiCuSO or the like) or n-type (Bi2 O2 CO3, etc.) semiconductor materials can be obtained by adjusting the anion layer
Summary
Semiconductor photocatalysis has attracted increasing attention because of the capability of harvesting the solar energy to eliminate environmental pollutants [1,2,3,4,5,6,7]. Some Aurivillius type bismuth-based oxide semiconductor materials such as BiOX (X = Cl, Br, I), BiVO4 and. Bismuth-based layered-structure compounds have a unique crystal structure and band structure. A series of Bi-based layered-structural photocatalytic materials of various band gap widths from 3.2 eV (e.g., BiOCl [15]) to 1.12~1.5 eV (e.g., Bi2 O2 S [16,17]) can be obtained by combining the (Bi-O)+ layer with different anion layers. P-type (BiCuSO or the like) or n-type (Bi2 O2 CO3 , etc.) semiconductor materials can be obtained by adjusting the anion layer
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