Abstract
A new method to synthesize 18O standard samples to be used in nuclear reaction analyses is proposed and investigated. This method consists of obtaining a Si18O2 film on a Si substrate using a natural abundance SiO2 film as a passivation layer to prevent the isotopically enriched film to be exposed to the atmosphere and possibly degraded by it. For that, sequential oxidation steps are performed followed by a controlled etching in aqueous hydrofluoric acid. Details of these steps are discussed as well as the stability of the synthesized samples. Applications using these standard samples in the field of alternative semiconductors to Si (SiC and Ge), used in micro and nanoelectronics are also presented.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
