Synthesis and Application of Molybdenum Disulphide Thin Layers Grown By Chemical Vapour Deposition

Abstract

Recently, two-dimensional (2D) molybdenum disulfide (MoS2) thin layers have been considered for the next generation optoelectronic devices, field effect transistors (FETs) and flexible electronics due to their flexibility, ultra-thin dimensions and excellent semiconducting properties. In this study, large area MoS2 mono-layers/ bi-layers/ tri-layers were grown on different types of substrates (SiO2/Si, Si) by chemical vapour deposition (CVD) technique. The MoS2 thin layers were synthesized at high temperatures (800 oC, 900 oC and 1000 oC) by using solid source precursors of molybdenum trioxide and sulphur in an argon atmosphere. The as-grown MoS2 thin layers were systematically characterized by using X-ray diffraction (XRD) and scanning electron microscopy (SEM) for phase analysis and to determine the surface morphology, respectively. Further, the thickness and surface roughness of the grown MoS2 thin layers were analysed by atomic force microscopy (AFM). Micro-Raman spectroscopy was used to identify the number of grown MoS2 layers and their crystalline quality. Finally, the electrical properties of the grown MoS2 thin layers were evaluated by using DC I-V measurements at room temperature in order to know the resistance of the grown layers.