Abstract
Interface modification is an effective technique to improve power conversion efficiency (PCE) of perovskite solar cells (PSCs). In this study, three kinds of hole transport layers (HTLs), including planar-nickel oxide (P-NiOx) film, surface-nanostructured-NiOx (S-NiOx) film, and modified-NiOx (M-NiOx) film, are synthesized by low-temperature fabrication technique. Furthermore, M-NiOx film is defined by modifying P-NiOx film with ultra-low concentration NiOx nanoparticles. The results show that the M-NiOx film has higher conductivity and carrier transport ability than those of P-NiOx and S-NiOx. The special morphology of M-NiOx film is beneficial to improving the crystallinity of MAPbI3 perovskite film. Thus, the PSC based on M-NiOx film exhibits the highest short-circuit current density (Jsc) of 21.30 mA cm−2, which is larger than those of PSCs based on P-NiOx (17.74 mA cm−2) and S-NiOx films (16.56 mA cm−2). The optimized PSC based on M-NiOx film exhibits the high photovoltaic performance with PCE of 16.67%. The optimized PSC with M-NiOx film shows a long-term stability. After storing in a nitrogen-filled glove box for 1000 h, the PSC with M-NiOx film still has 85% of its initial PCE.
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