Abstract

A high-quality Sn-based perovskite absorption layer and effective carrier transport are the basis for high-performance Sn-based perovskite solar cells. The suppression of Sn2+ oxidation and rapid crystallization is the key to obtaining high-quality Sn-based perovskite film. And interface engineering is an effective strategy to enhance carrier extraction and transport. In this work, tin fluoride (SnF2) was introduced to the perovskite precursor solution, which can effectively modulate the crystallization and morphology of Sn-based perovskite layer. Furthermore, the hole-transporting layer of PEDOT:PSS was modified with CsI to enhance the hole extraction and transport. As a result, the fabricated inverted Sn-based perovskite solar cells demonstrated a power conversion efficiency of 7.53% with enhanced stability.

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