Abstract
The electrical instability of a-IGZO TFTs limits its application in future display. Here, we investigate the effects of nitrogen doping on the electrical properties and bias stability of a-IGZO TFTs, and the IGZO films were obtained by magnetron sputtering using ceramic targets (In:Ga:Zn = 4:2:2). The performance and bias stability of a-IGZO TFTs are improved synergistically. The optimized device has a high mobility of 38.36 cm2/vs, threshold voltage of 1.11 V, subthreshold swing of 101.2 mV/dec, and the performance and stability are effectively improved, which may be mainly due to the back channel gradient nitrogen doping avoiding the formation of heterojunction interface and reducing the defect of bulk channel layer.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
