Abstract
The electrical instability of a-IGZO TFTs limits its application in future display. Here, we investigate the effects of nitrogen doping on the electrical properties and bias stability of a-IGZO TFTs, and the IGZO films were obtained by magnetron sputtering using ceramic targets (In:Ga:Zn = 4:2:2). The performance and bias stability of a-IGZO TFTs are improved synergistically. The optimized device has a high mobility of 38.36 cm2/vs, threshold voltage of 1.11 V, subthreshold swing of 101.2 mV/dec, and the performance and stability are effectively improved, which may be mainly due to the back channel gradient nitrogen doping avoiding the formation of heterojunction interface and reducing the defect of bulk channel layer.
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