Abstract
The present work investigates photoelectrochemical response of CdSe quantum dots (QDs) sensitization on electrodeposited hematite (α-Fe2O3) thin films. QDs sensitization significantly enhances the photocurrent density and incident-photon-to current-conversion efficiency of α-Fe2O3. Highest photocurrent density of 1.14 mA cm−2 at 0.8 V/SCE electrode potential is observed for 48 h CdSe QDs sensitized α-Fe2O3 thin film, which possesses maximum CdSe QDs concentration. Enhancement in photocurrent has been mainly attributed to the proper band edge alignment of CdSe QDs with α-Fe2O3, leading to better charge transfer kinetics. Further, improved photoelectrochemical performance is also convinced by higher absorption, more negative flat band potential and decreased value of resistance of the sensitized sample. XRD, EDX, FESEM, RAMAN, UV visible spectroscopy and Mott Schottky studies are also carried out to analyze PEC data.
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