Abstract
Selective chelation and protective film formation were synergistically combined to achieve Co/Cu galvanic corrosion control. Chelating agent imionodisuccinic acid and protective film formation agent benzotriazole are strategically chosen for fulfilling the above proposed task in alkaline solution for Co barrier chemical mechanical planarization (CMP). Chronopotentiometry and linear dynamic potential polarization methods are used to investigate the thermodynamics and kinetics of Co and Cu corrosion. A synergistic control of Co/Cu corrosion was accomplished by judiciously balancing the power of selective chelation and protective film formation. This systematic approach can be expanded to systematically design other metal CMP slurries to fulfil the desired polishing performance.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
