Abstract

Gallium chalcogenides, emerging as promising anode for sodium-ion batteries (SIBs), show high capacity utilization and self-healing ability but poor electrochemical performance owing to their inferior electrical conductivity and sluggish ion diffusion. Building heterostructures is regarded as a valid strategy to facilitate carrier transfer and boost sodium storage. Herein, we develop a controllable two-step approach to synthesize the Ga 2 O 3 @Ga 2 S 3 @C heterostructures. Serving as the anode for SIBs, it exhibits a reversible capacity of 680 mAh g −1 at a current density of 0.1 A g −1 after 100 cycles, as well as superior cyclic stability (410 mAh g −1 at an ultrahigh current density of 20.0 A g −1 over 4000 cycles). The mechanism for the enhanced sodium storage of Ga 2 O 3 @Ga 2 S 3 @C heterostructures is disclosed, which is mainly ascribed to the synergistic effect of built-in electric field and interfacial effect in p-n junctions, helping the sodium ions diffusion and the further conversion reactions. • The uniform Ga 2 O 3 @Ga 2 S 3 @C heterostructures are developed by a two-step method. • The Ga 2 O 3 @Ga 2 S 3 @C is an outstanding anode for sodium-ion batteries (SIBs). • High capacity, superior rate capability and cycle stability for SIBs are achieved. • Built-in electric field and interfacial effect in heterostructures help Na storage.

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