Abstract
Hydrogenated nanocrystalline silicon oxide (nc‐SiOx:H) has drawn extensive attention during the past years for the utilization of silicon heterojunction (SHJ) solar cells. This material is demonstrated to be the key to the performance improvement of SHJ solar cells. Herein, the influence of the process gas compositions on the optical, electronic, chemical, and structural properties of n‐type nc‐SiOx:H films at the thickness of 38 nm is systematically investigated. The synergetic effect of CO2 and PH3 gas flow fraction ( and ) and the synergetic effect of CO2 and SiH4 gas flow fraction ( and ) on the growth of nc‐SiOx:H (n) films are demonstrated. Creatively combining the Fourier‐transform infrared, UV‐Raman scattering spectroscopy, spectroscopy ellipsometry, and photo‐thermal deflection spectroscopy measurement, the mechanism behind the synergetic effect of the gas compositions on the material properties is analyzed.
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