Abstract
High-resolution synchrotron x-ray scattering measurements were used to study the strain relaxation of AlN/Sapphire (0001) films grown by radio frequency magnetron sputtering. Films thinner than ∼ 100 Å were highly strained, and grown as two-dimensional epitaxial layers. The exact condition for the extended domain matching was deduced. With increasing film thickness, the lattice strain was relieved, while columnar seeds start to nucleate on parts of the film. The columnar grains on the epitaxial layer, however, impeded the strain relaxation of the epitaxial layer underneath, which resulted in a non-uniform strain distribution in the film. The highly asymmetric AlN(0002) reflection of thick AlN films illustrates that the strain distribution is non-uniform.
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