Abstract
ABSTRACTPlatinum was deposited onto porous silicon by a reductive deposition technique utilizing the inherent reducing power of porous silicon. The resulting deposits were studied by X-ray Absorption Near Edge Structure (XANES) at the Si-K, Pt-M3, 2, and Pt-L 3 ,2 edges. Samples of varying deposition concentrations were studied and were compared with untreated porous silicon and platinum silicides to determine the nature of the deposits and their effect upon the porous silicon substrate itself.
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