Abstract
ABSTRACTThe residual stress in a 6H-SiC wafer with a 3C-SiC epitaxial overlayer is determined by the technique of Synchrotron white beam x-ray topography (SWBXT). The short wavelength and high energy attributes of synchrotron radiation are exploited to very accurately determine the wafer curvature. Different approaches including absorption edge contour (AEC) mapping, multiple diffraction line (MDL) analysis and diffracted x-ray beam divergence (DXBD) analysis in both transmission and reflection geometry are demonstrated. The residual stress distribution is calculated from the wafer curvature measurement.
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