Abstract
ABSTRACTSynchrotron white beam X-ray diffraction topography in transmission geometry has been used to non-destructively investigate defect structures in silicon single crystal wafers, both prior and subsequent to a 60 second rapid thermal processing (RTP) treatment at 1050°C. Prior to RTP dislocations, precipitates and swirl defects were observed and characterized. Following RTP the following effects were observed: glide of individual dislocations and dislocation multiplication; and the enhancement of the strain field associated with the swirl defects. Precipitates appeared unaffected by RTP. This work shows that synchrotron topography is capable of non-destructively revealing significant dislocation motion induced by RTP under conditions were such motion is not thought to occur. This dislocation motion is likely to be detrimental to device performance. The technique enables determination of the conditions required to avoid such dislocation motion.
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