Abstract
Indium phosphide single crystals grown by the liquid encapsulated Czochralski (LEC) and vertical gradient freeze (VFG) techniques have been studied with X-ray diffraction topography using synchrotron radiation. Section topographs show that while the VGF substrates are of a better quality than the LEC ones, the defect level in epitaxial layers is more strongly determined by the quaternary layer composition and lattice mismatch than by threading dislocations from the substrate.
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