Abstract
AbstractIn this study, homoepitaxial GaN grown on ammonothermal GaN substrates is non‐destructively investigated by synchrotron radiation X‐ray topography (SR‐XRT) and X‐ray diffraction (XRD). The homoepitaxial GaN layer was found to be of excellent crystal quality with individual dislocations clearly visible in the SR‐XRT images. SR‐XRT images and XRD rocking curves suggest the dislocations are mainly of mixed type. To the best of our knowledge the measured dislocation density is the lowest reported in a homoepitaxial GaN film (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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