Abstract
The influence of synchrotron radiation on the surface states at the SiSiO 2 interface is observed based on experimental data received at the “X-ray Topography and Diffractometry” station of the VEPP-3 and VEPP-4 storage rings. Two kinds of MOS-structures were used. Theoretical calculations of such influence were made, and also a theoretical prediction about the dose dependence of such influence was made for the NSRF “Zelenograd”, which will soon be built.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
