Abstract
Ln 4f partial densities of states (DOSs) in layered oxysulfide semiconductors (LnO)CuS (Ln = Ce, Pr, Nd) have been deduced by means of the Ln 4d–4f resonant photoemission spectroscopy. The Ce 4f DOS contributes just below the valence-band maximum (VBM) of (CeO)CuS, and on going from Ln = Ce to Pr, and to Nd, the 4f DOS shifts toward the deeper binding-energy side, leading no 4f contribution near VBM for Ln = Pr and Nd. The O 2p partial DOSs derived from O Kα emission spectra are almost unchanged with the Ln elements.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
