Abstract
First results of depth profile and thin-film analysis by glancing incidence x-ray fluorescence analysis of low-Z elements (carbon to aluminum), usually not detectable by conventional instruments, were obtained by synchrotron radiation excitation (SSRL, Beamline III-4) and by a special energy-dispersive spectrometer with high efficiency for low-energy fluorescence radiation [Ge(HP) detector with an ultra-thin 300 nm entrance window]. The results of calculations taking into account several sample parameters of interest agree with the measurements. Results are presented for the determination of depth profiles of Na, Mg and Al implanted in Si wafers and for thin films of Al and a C bulk sample. Copyright © 1999 John Wiley & Sons, Ltd.
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