Abstract
We experimentally demonstrate the synaptic plasticity characteristics in the non-volatile field-effect transistors (NVFET) integrated with amorphous Al 2 O 3 dielectric utilizing voltage-modulated oxygen vacancy and negative charge dipoles. Both short-term plasticity (STP) and long-term potentiation (LTP) behaviors are obtained in a single Al 2 O 3 NVFET. Sub-millisecond LTP speed allows for high-speed processing. Spike-timing-dependent plasticity (STDP) curves with 100 ns spikes are achieved for the amorphous Al 2 O 3 synaptic transistor.
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