Symmetry of electronic states in antiferromagnets; applications to CuO 2 planes

Abstract

The symmetry analysis of electronic states in antiferromagnetic phase is applied to CuO 2 - plane of High- T c materials. The various allowed states are analyzed for characteristic points at the magnetic Brillouin zone boundary. The results show the way to discriminate experimentally between the two main hypothesis for the nature of carriers: p-d hybridization versus oxygen picture, Mott-Hubbard gap versus charge transfer gap.