Abstract
Diagonal self-assembled InAs quantum wire (QWR) arrays with the stacked InAs/In 0.52 Al 0.48 As structure are grown on InP substrates, which are (001)-oriented and misoriented by 6° towards the [100] direction. Both the molecular beam epitaxy (MBE) and migration enhanced epitaxy (MEE) techniques are employed. Transmission electron microscopy reveals that whether a diagonal InAs QWR array of the stacked InAs/InAlAs is symmetrical about the growth direction or not depends on the growth method as well as substrate orientation. Asymmetry in the diagonal MEE-grown InAs QWR array can be ascribed to the influence of surface reconstruction on upward migration of adatoms during the self-assembly of the InAs quantum wires.
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