Abstract
We have developed a junction capacitance spectroscopy that provides the means to obtain structural information for semiconductor defects. We combine stress alignment and photocapacitance measurements that are made with polarized infrared light to determine that the electron irradiation induced level H(0.21 eV) in p-type silicon that is observed by deep level transient spectroscopy has the same symmetry as the divacancy. The recovery kinetics of the stress alignment follow closely the microscopic reorientation rate of the divacancy. On the basis of this information we have unambiguously assigned H(0.21 eV) to the divacancy.
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