Abstract
EPR studies suggest that most transition atom impurities in silicon occupy the tetrahedral interstitial (TI) site, preserving the Td symmetry of the host (1). In this paper we will give, within the loca1-density approximation, a unified description of the electronic structure and “breathing-mode”. relaxation of tetrahedral interstitial Cr, Mn, Fe, Co and Ni impurities in bulk silicon.
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