Abstract
We have designed and fabricated a half-wavelength reflection line resonator that consists of a pair of coupled microstrip lines on a GaAs/AlGaAs heterostructure. By changing the top gate voltage on a small square with a two-dimensional electron gas under the resonator, the quality factor was tuned over a large range from 2700 to below 600. Apart from being of fundamental interest, this gate modulation technique has the potential for use in on-chip resonator applications.
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