Abstract
The problem of the ballistic electron tunneling is considered in magnetic tunnel junction with embedded non-magnetic nanoparticles (NP-MTJ), which creates additional conducting middle layer. The strong temperature impact was found in the system with averaged NP diameter dav < 1.8 nm. Temperature simulation is consistent with experimental observations showing the transition between dip and classical dome-like tunneling magnetoresistance (TMR) voltage behaviors. The low temperature approach also predicts step-like TMR and quantized in-plane spin transfer torque (STT) effects. The robust asymmetric STT respond is found due to voltage sign inversion in NP-MTJs with barrier asymmetry. Furthermore, it is shown how size distribution of NPs as well as quantization rules modify the spin-current filtering properties of the nanoparticles in ballistic regime. Different quantization rules for the transverse component of the wave vector are considered to overpass the dimensional threshold (dav ≈ 1.8 nm) between quantum well and bulk-assisted states of the middle layer.
Highlights
The problem of the ballistic electron tunneling is considered in magnetic tunnel junction with embedded non-magnetic nanoparticles (NP-Magnetic tunnel junctions (MTJs)), which creates additional conducting middle layer
The low temperature anomalies of tunneling magnetoresistance (TMR) effects at low voltages were studied in terms of different size distributions of NPs in NP-MTJs
Approach of the high degree quantization shows precise data fitting at dav < 1.8 nm, while the low degree of quantization is more important at dav>1.8 nm, explaining experimental results
Summary
The problem of the ballistic electron tunneling is considered in magnetic tunnel junction with embedded non-magnetic nanoparticles (NP-MTJ), which creates additional conducting middle layer. The robust asymmetric STT respond is found due to voltage sign inversion in NP-MTJs with barrier asymmetry It is shown how size distribution of NPs as well as quantization rules modify the spin-current filtering properties of the nanoparticles in ballistic regime. Present research is oriented to study a composite barrier-type structure such as magnetic tunnel junctions with embedded non-magnetic nanoparticles (NP-MTJ) at finite temperatures. These junctions are comparable with SMTJs in terms of high thermal stability factor, TMR and low RA values. Double barrier MTJs are promising structures for MRAM applications due to higher thermal stability factor, low noise and less critical current density for the switching in comparison to SMTJs9–15
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