Abstract
This paper presents a new method for fault modelling of MOS combinational circuits at the transistor level. Every transistor is replaced with a conductance controlled by the gate logic value. The specific advantage of the method is use of a symbolic simulator for circuit function extraction. This function is referred as Transistor Logic Conductance Function (TLCF). Starting from a known TLCF, a simple set of rules is used for output state determination. The method is suitable for multiple fault model generation thanks to the fact that only one symbolic analysis of a circuit is sufficient for modelling different stuck-open, stuck-short and stuck-at faults of a logic gate. Moreover, the method can deal also with bridging and cut faults. Finally, the application of the TLCF for test pattern generation is considered.
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