Abstract
A high-voltage MOSFET-based RF switch with improved switching time is presented in this paper. The improvement is achieved by adding an auxiliary circuitry distributed along the stack which substantially speeds up the charging and discharging of gate oxide of the transistors. The auxiliary network is enabled by a delay-based control circuit defining acceleration time-window for switching transient. An RF switch comprising the proposed solution has been implemented in a dedicated 65 nm CMOS switch technology. The measured hardware demonstrates the improvement in switching time from <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$19.2\ \mu s$</tex> to <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$1.6\ \mu s$</tex> in OFF-to-ON direction and from <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$0.6\ \mu s$</tex> to <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$0.2\ \mu s$</tex> ; in ON-to-OFF direction compared to the state-of-art implementation. The improvement is achieved at no penalty in key RF characteristics of the device. Particularly, both conventional and proposed switches are able to withstand up to 48 dBm RF power in OFF-state and demonstrate identical small- and large-signal response.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
