Abstract
Using V2O5 and MoO3 powders as precursors,a novel preparation method, i.e., the so-called inorganic sol-gel, isdeveloped to synthesize Mo6+-doped vanadium dioxide (VO2)thin films. The structure, valence state, phase transition temperatureand magnitude of resistivity change are characterized by x-raydiffraction, x-ray photoelectron spectroscopy and the four-pointequipment. The results show that the main chemical composition of dopedthin films was VO2, the structure of MoO3 in doped thinfilms did not change, and the phase transition temperature of dopedthin films was obviously lowered with the increasing MoO3 dopedconcentration, but the magnitude of resistivity change was alsodecreased. However, so long as MoO3 doped concentration was notmore than 5 wt.%, the magnitude of resistivity change of doped thinfilms still reached more 2 orders. The analysis show that MoO3dissolved in crystal structure of VO2 formed the donor defectMOvx and then reduced the forbidden-band width, which lowered thephase transition temperature. Consequently it was widened applicationsof the VO2 thin films.
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