Abstract
A novel core-source gate-all-around TFET based on InGaAs/InP heterojunction is presented in this paper. In the proposed device, the main current flow mechanism is line tunneling which occurs across a heterojunction composed of a narrow-bandgap material of source and a wide-bandgap material of channel. The off-state current and ambipolar conduction are diminished by simultaneously employing two different doping concentrations in the channel region, as well as a wide-bandgap material in drain region. We study the switching performance of the device using a calibrated numerical device simulator. The results indicate impressive performance of the proposed transistor, including an extremely steep subthreshold swing, sub 3mv/dec over 5 decades and sub 60mv/dec over 9 decades of drain current, and average subthreshold swing of about 27mv/dec, and an on-state to off-state current ratio of about 1011 at VGS = 0.3 V. The impact of variations in the device dimensions, doping and bias condition on its electrical characteristics is also studied and discussed physically.
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