Abstract
In this work, the electrical switching, optical and structural properties of Sn doped Si-Te glasses and thin films are studied. The Si20Te80-xSnx (1 ≤ x ≤ 5) glasses and thin-film samples are prepared using melt quenching and flash evaporation techniques respectively. All prepared bulk and thin-film samples exhibited smooth memory type of switching behaviour. Thicknesses of the thin film samples are found to be in the range of 92-111 nm. The electrical switching fields and energy bandgap of Si20Te80-xSnx (1 ≤ x ≤ 5) thin films have decreased as the concentration of Sn dopant is increased. Micro-Raman investigation on as-quenched Si20Te80-xSnx glasses is performed to study the structural network and its progression with composition. The reported Raman peaks are attributed to crystalline Te and the vibrational modes of Sn lattice. Scanning Electron Microscopy studies on switched and unswitched regions of Si20Te80-xSnx (1 ≤ x ≤ 5) glasses reveal the formation of a crystalline channel that acts as a conduction path between the two electrodes in the switched region.
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