Abstract
Switching operation in a GaInAs-InP MQW (multiple-quantum-well) three-dimensional directional coupler switch at the wavelength of 1.57 mu m was achieved with a short-length device (L=170 mu m approximately=L/sub c/). The device structure fabrication is based on a high-mesa-shaped integrated-twin-guide structure. Switching characteristics are reported, showing that the refractive index variation in the quantum well is about +0.68% with very low absorption loss increase.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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