Abstract
It was found that self-modulation of the spectrum of high-intensity stimulated radiation of a thin (about 1 μm) GaAs layer can be represented as switching of spectral modes of radiation caused by stimulated Raman scattering (SRS). It is shown that the SRS results from modulation of population of energy levels upon interband oscillations of electrons in the presence of the radiation field. It is shown that such oscillations become possible owing to the slowing down of elimination of deviations from the Fermi distribution due to energy transport of carriers. It is clarified that the oscillations are synchronized owing to the SRS.
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