Switching of major nonradiative recombination centers (NRCs) from carbon impurities to intrinsic NRCs in GaN crystals

Abstract

The external quantum efficiency (EQE) and internal quantum efficiency (IQE) of radiation are quantified by omnidirectional photoluminescence measurements using an integrating sphere for two types of GaN crystals with different carbon concentrations ([C] = 1×1014 cm−3, 2×1015 cm−3). In the sample with lower [C], when the excitation density is 140 W cm−2, the EQE and IQE for near-band-edge (NBE) emission are 0.787% and 21.7%, respectively. The relationship between [C] and the IQE for NBE emission indicates that carbon impurities work as effective nonradiative recombination centers (NRCs) in n-type GaN, and major NRCs switch from carbon impurities to intrinsic NRCs, such as vacancies, when [C] falls below 3.5×1014 cm−3.