Abstract
AbstractTungsten (W) is one of the most promising materials to be used in resistive random‐access memory electrodes due to its low work function and compatibility with semiconductors, which raises the possibility of device integration, scalability, and low power consumption. However, W has multiple oxidation states that affect device reliability, due to the formation of semistable oxides at the switching interface. W chemical interaction is modulated through the insertion of Al2O3 or Ti interfacial layers. The time‐dependent switching kinetics are investigated in transient Set/Reset operations. It is observed that a compact and stoichiometric atomic‐layer‐deposited Al2O3 barrier layer completely prevents W oxidation, resulting in a sharp current transient. The use of a sputtered Ti buffer layer allows a partial W oxidation, defining a tunable high‐resistance state by pulse rise time control. Notable improvements in endurance, power consumption, resistance state stabilization, and cycle‐to‐cycle and device‐to‐device variability are reported. Switching kinetics and conductive nanofilament evolution are studied in detail to understand the microscopic effect of the interface modifications. The tunability of multi‐HRS states by pulse timing control in Pt/HfO2/Ti/W is in the interest of network and brain‐inspired computing applications, adding a degree of freedom in the modulation of its resistance.
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