Abstract
The switching properties previous to the memory effects of bulk chalcogeni de semiconductor glasses in the Al-As-Te system are investigated. The values of the switching voltage are related to the glass transition temperatures as well as to glass composition and a linear relation between ln V th and Te at% is found. A constant electrical power for switching occurrence has been found. The behaviour of the switching voltage V th with temperatures ranging from room temperature to 100°C follows an exponential law previously reported by other authors. The delay time versus applied voltage shows a typical glass bulk behaviour. The experimental results support an electrothermal model for switching in this system for the used conditions, although a low-field dependence must be introduced for a complete agreement.
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