Abstract
The rise and fall times for both silicon-based Schottky Collector Heterojunction Bipolar Transistor (SCHBT) and Conventional silicon-based Heterojunction Bipolar Transistor (CHBT) were calculated. The results show that SCHBTs have allowed 20% shorter rise and fall times when compared with CHBTs. The effect of the base resistance in charging and discharging the emitter capacitance is included. We use an approximation for the effect of the base resistance as an additional RC time constant. Analysis of the collector transition layer shows that the main advantage of SCHBT over CHBT is that the cut-off frequency degradation is drastically decreased at high collector current density.
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