Abstract
Photoinduced switching of resistance by several orders of magnitude is observed in oxygen-deficient La0.6Ca0.4MnO3−δ thin films deposited on Si substrates. The magnitude of the transient photoconductivity could attain 95.9% at room temperature under 532nm cw laser illumination at laser intensity of 142mW∕cm2. The switching has a fast photoresponse effect on a nanosecond time scale when irradiated by a 532nm laser pulse of 7ns duration. The photocurrent and photoresponse times depend on the laser intensity and the applied electric field. These results can be important for practical applications in the manganite-based optical devices.
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